SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF, MEMORY SYSTEMS
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United States of America
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Issued Date -
Feb 6, 2025
app pub date -
Dec 4, 2023
filing date -
Dec 4, 2023
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Abstract
Implementations of the present application disclose a semiconductor device and a fabrication method thereof, and a memory system. The fabrication method includes: forming a semiconductor structure in the wafer, including forming a first device and a first scribe line abutting the first device in a first direction and extending in a second direction, the first direction intersecting the second direction; forming a barrier structure extending in the second direction at a site in the first scribe line abutting the first device. The present application reduces the probability of scribe line cracks, increase productions of chips and reduce costs of fabrication.
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