TRACKING THE EFFECTS OF VOLTAGE AND TEMPERATURE ON A MEMORY DEVICE USING AN INTERNAL OSCILLATOR
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United States of America
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Issued Date -
Feb 6, 2025
app pub date -
Oct 23, 2024
filing date -
Oct 23, 2024
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Abstract
A first count value corresponding to a first run cycle of an oscillator and a second count value corresponding to a second run cycle of the oscillator are identified. A timing parameter for performing an input/output operation on a memory device is adjusted based on the first count value and the second count value.
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