METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
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United States of America
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Issued Date -
Feb 6, 2025
app pub date -
Oct 18, 2024
filing date -
Oct 18, 2024
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Abstract
In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.
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