METHOD OF PREDICTING EUV DOSE, METHOD OF DESIGNING PAG USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

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United States of America

APP PUB NO 20250044706A1
SERIAL NO

18674355

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In a method of predicting extreme ultraviolet (EUV) dose, an entire photochemical reaction mechanism until a photoacid generator (PAG) molecule releases a proton from a PAG-cation under EUV exposure may be analyzed. A lowest unoccupied molecular orbital (LUMO) energy level may be obtained by performing a simulation for structural optimization of the PAG-cation. An additional parameter different from the LUMO energy level may be obtained by performing a simulation for structural optimization of at least one intermediate molecular structure formed by the entire photochemical reaction mechanism. A two-parameter linear regression model for predicting the EUV dose may be obtained based on the LUMO energy level and the additional parameter.

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SAMSUNG ELECTRONICS CO LTDSUWON-SI 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BAEK, Seungyeol Suwon-si, KR 8 6
HONG, Suk Koo Suwon-si, KR 17 1
KIM, Daekeon Suwon-si, KR 4 0
NGUYEN, Thanh Cuong Suwon-si, KR 8 0
PARK, Ji Young Suwon-si, KR 100 574
SONG, Giyoung Suwon-si, KR 11 7
SONG, Hyun-Ji Suwon-si, KR 33 89

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