ULTRATHIN FILM SHADOW MASK FOR LITHOGRAPHY AND LITHOGRAPHY METHOD USING THE SAME

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United States of America

APP PUB NO 20250044698A1
SERIAL NO

18544920

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Provided are a new ultrathin film silicon shadow mask which is flexible, is reusable, and can be precisely aligned and manipulated through transfer printing, and a lithography method using the same. A thin thickness of a silicon shadow mask may intrinsically form a pattern having an enhanced resolution in a plane and a non-planar surface. Further, the silicon shadow mask may be formed on a substrate by metal deposition in addition to etching in a multi-layer configuration by a transfer printing technology based alignment method. Through such a method, a material in which patterning is impossible may be patterned through photolithography.

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Patent Owner(s)

Patent OwnerAddress
POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION77 CHEONGAM-RO NAM-GU POHANG-SI GYEONGSANGBUK-DO 37673

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KIM, Seok Pohang-si, KR 97 941
LEE, Sangyeop Pohang-si, KR 18 366

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