MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIABLE DOPANT CONCENTRATION
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United States of America
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Feb 6, 2025
app pub date -
Jul 22, 2024
filing date -
Jul 22, 2024
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Abstract
A manufacturing process vertical-conduction power device includes: from a layer containing semiconductor material with a lattice structure having spatial symmetry, growing an epitaxial layer, having the lattice structure with spatial symmetry and a first electrical conductivity; forming body having regions a second electrical conductivity, opposite to the first electrical conductivity, in the epitaxial layer; and forming a current-spreading layer in the epitaxial layer between the body regions. Forming the body regions includes carrying out a body channeling ion implantation, using a body mask. Forming the current-spreading layer includes: forming shallow damaged regions in the body regions through the body mask so that the lattice structure is altered in the shallow damaged regions; and carrying out a current-spreading channeling ion implantation, using the shallow damaged regions as implantation mask.
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