THIN-FILM TRANSISTOR AND X-RAY SENSOR
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United States of America
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Jan 30, 2025
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Jul 23, 2024
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Jul 23, 2024
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Abstract
A thin-film transistor to be used in an X-ray sensor includes a gate electrode, a semiconductor layer, and a gate insulating layer located between the semiconductor layer and the gate electrode. The gate insulating layer includes a first region having an interface with the gate electrode, a second region having an interface with the semiconductor layer, and a third region located between the first region and the second region. Each of the first region and the second region has a density of electron trap states and a density of hole trap states that are higher than whichever of a density of electron trap states and a density of hole trap states of the third region that is lower.
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