HIGH-ELECTRON-MOBILITY TRANSISTOR
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United States of America
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Issued Date -
Jan 30, 2025
app pub date -
Jul 27, 2023
filing date -
Jul 27, 2023
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor and methods of manufacture. The structure includes: a gate structure; a first field plate on a first side of the gate structure; and a second field plate on a second side of the gate structure, independent from the first field plate.
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