MAGNETORESISTIVE RANDOM ACCESS MEMORY
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United States of America
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Issued Date -
Jan 30, 2025
app pub date -
Oct 16, 2024
filing date -
Oct 16, 2024
priority date (Note) -
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Abstract
A magnetoresistive random access memory (MRAM) includes a first transistor and a second transistor on a substrate, a source line coupled to a first source/drain region of the first transistor, and a first metal interconnection coupled to a second source/drain region of the first transistor. Preferably, the first metal interconnection is extended to overlap the first transistor and the second transistor and the first metal interconnection further includes a first end coupled to the second source/drain region of the first transistor and a second end coupled to a magnetic tunneling junction (MTJ).
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