SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF AND MEMORY SYSTEM
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United States of America
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Issued Date -
Jan 30, 2025
app pub date -
Nov 17, 2023
filing date -
Nov 17, 2023
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Abstract
Semiconductor structures, fabrication methods thereof, and memory systems are provided. In one aspect, a method of forming a semiconductor structure includes: forming a plurality of first trenches in a semiconductor base from a surface of the semiconductor base, forming a plurality of gate structures in the plurality of first trenches, forming a plurality of second trenches in the semiconductor base, and forming a plurality of isolation structures in the plurality of second trenches. The plurality of first trenches extend along a first direction. Each of the plurality of second trenches is between two adjacent trenches of the plurality of first trenches, and the plurality of second trenches extend along the first direction.
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