INTERCONNECT STRUCTURE AND FABRICATION METHOD THEREOF
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United States of America
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Issued Date -
Jan 30, 2025
app pub date -
Jul 25, 2023
filing date -
Jul 25, 2023
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Abstract
A method of forming a semiconductor structure includes forming a conductive capping layer over a conductive feature, forming a dielectric layer over the conductive capping layer, forming an opening in the dielectric layer to expose a top surface of the conductive capping layer, forming an inhibitor film at the top surface of the conductive capping layer, depositing a barrier layer on sidewalls of the opening, removing the inhibitor film to expose the top surface of the conductive capping layer, depositing a supplementary liner on the barrier layer and the top surface of the conductive capping layer, and depositing a conductive material on the supplementary liner and filling the opening.
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