SUBSTRATE PROCESSING METHOD

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United States of America

APP PUB NO 20250038048A1
SERIAL NO

18912027

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Abstract

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A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, SeungWoo Hwaseong-si, KR 18 860
Gu, YeaHyun Hwaseong-si, KR 7 233
Kim, Hyunchul Hwaseong-si, KR 358 5057
Kim, KiHun Yongin-si, KR 22 18
Shin, WooSik Hwaseong-si, KR 2 2

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