DENDRITE MITIGATION OF PASSIVE COMPONENTS

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250038043A1
SERIAL NO

18225920

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Abstract

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A passive device of a semiconductor substrate and method of making same. The passive device includes first and second top metal components on a substrate core having an insulator substrate. A passivation layer is formed over the top metal components and insulator substrate. A first conductive component is formed on the passivation layer electrically contacting the first top metal component, as well as a second conductive component that is formed on the passivation layer and electrically contacts the second top metal component. In addition, the device includes an insulator material that is formed over the first conductive component and the second conductive component. A cavity is defined by the insulator material between the first conductive component and the second conductive component. The device further includes an ABF plug component that is formed in the cavity between the first conductive component and the second conductive component.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Jui Shen Taichung, TW 4 0
Chiu, Chen-Nan Hsinchu, TW 6 0
Chuang, Yao-Chun Hsinchu, TW 94 790
Huang, Li-Hsien Zhubei, TW 124 1359
Lu, Yinlung Hsinchu, TW 36 15

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