SiC TRENCH BOTTOM CORNER ROUNDING
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United States of America
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Issued Date -
Jan 30, 2025
app pub date -
Jul 27, 2023
filing date -
Jul 27, 2023
priority date (Note) -
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Abstract
Disclosed herein are methods for forming MOSFET trenches with improved corner properties. In some embodiments, a method may include providing a device structure including an epitaxial layer and a hard mask over the epitaxial layer, and forming a trench through the well and the epitaxial layer, wherein the trench is defined by a sidewall, a bottom, and a corner at an intersection of the sidewall and the bottom. The method may further include implanting the device structure by delivering ions into the corner and into the bottom of the trench, and etching the trench to increase rounding of the corner.
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