MEMORY DEVICES CONFIGURED WITH ADAPTIVE WORD LINE PULSE ADJUSTMENT AND METHODS FOR OPERATING THE SAME

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United States of America

APP PUB NO 20250037751A1
SERIAL NO

18479300

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Abstract

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A memory device includes a memory array comprising a plurality of word lines, the plurality of word lines operatively coupled to a plurality of sets of memory cells, respectively. The memory device includes a controller operatively coupled to the memory array, and comprising an adaptive tracking circuit. The adaptive tracking circuit is configured to: receive a first signal conducted through a first tracking line; receive an address signal indicating one of the word lines to be asserted; and adjust, based on the address signal, a timing of a transition edge of a second signal conducted through a second tracking line.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chia-Cheng Hsinchu City, TW 140 822
Hsiao, Yu Jie Hsinchu City, TW 1 0
Wu, Ching-Wei Hsinchu City, TW 89 297

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