EXTREME ULTRAVIOLET LITHOGRAPHY METHOD AND EUV PHOTOMASK
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United States of America
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Issued Date -
Jan 30, 2025
app pub date -
Jul 28, 2023
filing date -
Jul 28, 2023
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Abstract
An attenuated phase-shifting mask (APSM) includes a substrate, a multi-layer structure, a capping layer and an absorber layer. The substrate has a first side and a second side opposite to the first side. The multi-layer structure is disposed over the first side of the substrate. The capping layer is disposed over the multi-layer structure. The absorber layer is disposed over a portion of the capping layer. The absorber layer includes a first material and a second material different from the first material. A thickness of the absorber layer is between approximately 30 nm and approximately 65 nm. A refractive index (n) of the absorber layer is between approximately 0.860 and approximately 0.945. An extinction coefficient (k) of the absorber layer is between approximately 0.070 and approximately 0.015.
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