REFLECTIVE MASK BLANK, REFLECTIVE MASK BLANK MANUFACTURING METHOD, REFLECTIVE MASK, AND REFLECTIVE MASK MANUFACTURING METHOD

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United States of America

APP PUB NO 20250036020A1
SERIAL NO

18911231

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Abstract

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A reflective mask blank includes: a substrate, a multilayer reflective film including molybdenum layers and silicon layers alternately and being configured to reflect EUV light, an intermediate film, a protective film, and an absorber film, in this order, in which the intermediate film includes silicon and nitrogen, an atomic weight ratio of a content of the nitrogen to a content of the silicon is 0.22 to 0.40 or 0.15 or less, the protective film includes one or more layers selected from the group consisting of a layer including rhodium and a layer including a rhodium-containing material, and the rhodium-containing material includes rhodium and one or more elements selected from the group consisting of boron, carbon, nitrogen, oxygen, silicon, titanium, zirconium, niobium, molybdenum, ruthenium, palladium, tantalum, and iridium.

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Patent Owner(s)

Patent OwnerAddress
AGC INC5-1 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 100-8405

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AKAGI, Daijiro Tokyo, JP 24 20
FUDETANI, Taiga Fukushima, JP 3 0
HANEKAWA, Hiroshi Tokyo, JP 24 82
HORI, Masaru Aichi, JP 89 2760
IWAOKA, Hiroaki Tokyo, JP 14 15
NISHIDA, Wataru Tokyo, JP 7 23
TSUTSUMI, Takayoshi Aichi, JP 23 1323

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