EUV RETICLE WITH EMBEDDED PROCESS ASSISTANCE LAYER AND METHOD OF MANUFACTURING THE EUV RETICLE
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United States of America
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Issued Date -
Jan 30, 2025
app pub date -
Jul 28, 2023
filing date -
Jul 28, 2023
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Abstract
An extreme ultraviolet (EUV) photolithography reticle includes a substrate and a reflective multilayer on the substrate. The reflective multilayer includes a plurality of stacked first pairs of layers, each pair include a first layer of a first material and a second layer of a second material on the first layer. The reflective multilayer includes a second pair of layers between two of the first pairs and including a first process assistance layer and a third layer of the second material on the process assistance layer. The first material and the second material are selectively etchable with respect to the first process assistance layer. The reticle includes a plurality of first absorption structures extending from a top of the reflective multilayer to the first process assistance layer and configured to absorb extreme ultraviolet light.
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