MEASURING DEVICE FOR CAPACITANCE OF SEMICONDUCTOR DEVICE AND MEASUREMENT JIG
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United States of America
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Issued Date -
Jan 30, 2025
app pub date -
May 24, 2024
filing date -
May 24, 2024
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Abstract
To improve the measurement accuracy of feedback capacitance of a semiconductor device. Between a gate terminal of a semiconductor device subject to measurement and an Lc terminal of an LCR meter, a first wiring that is passed through a core of a transformer once and connected between a gate terminal and a source terminal and a second wiring wound N times around a core of the transformer, and one end is connected to the Lc terminal and the other end is grounded are provided. when ω represents an angular frequency of the AC signal applied to the drain terminal of the semiconductor device, LS_6A represents inductance of the first wiring, LS_6B represents inductance of the second wiring, and CGS represents gate-source parasitic capacitance of the semiconductor device, a relationship of ωLS_6A<1/(ωCGS), and ωLS_6B/N2<1/(ωCGS) are satisfied.
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