METHOD FOR PROCESSING SILICON SUBSTRATE AND METHOD FOR PROCESSING LIQUID EJECTION HEAD SUBSTRATE
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United States of America
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Issued Date -
Jan 30, 2025
app pub date -
Jul 17, 2024
filing date -
Jul 17, 2024
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Abstract
A method for processing a silicon substrate is provided the method including repeatedly and alternately performing: an etching step of forming an etching pattern on the silicon substrate; and a protective film formation step of forming a protective film on a wall surface of the silicon substrate exposed in the etching step, wherein the method includes a protective film removal step of removing the protective film, which has been formed in the protective film formation step, by using a peeling solution, and wherein in the protective film formation step, the protective film is formed by using a mixed gas including 2,3,3,3-tetrafluoropropene and perfluorocyclobutane.
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