POLISHING PAD WITH REDUCED DEFECT AND METHOD OF PREPARING A SEMICONDUCTOR DEVICE USING THE SAME

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United States of America

APP PUB NO 20250033160A1
SERIAL NO

18747451

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Abstract

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In the polishing pad according to an embodiment, the particle size of debris obtained during conditioning and the zeta potential of a debris solution are adjusted to specific ranges. As a result, it is possible to minimize the occurrence of defects and scratches during a CMP process while reducing the size of debris, thereby maintaining excellent physical properties and performance of the polishing pad.

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Patent Owner(s)

Patent OwnerAddress
SK ENPULSE CO LTD1043 GYEONGGI-DAERO PYEONGTAEK-SI GYEONGGI-DO 17784

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KIM, Kyunghwan Gyeonggi-do, KR 98 584
SEO, Jangwon Gyeonggi-do, KR 129 2840
SHIN, Yujin Gyeonggi-do, KR 6 0
YOON, Jongwook Gyeonggi-do, KR 5 18

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