Importance

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Abstract

An image sensor includes a first semiconductor chip including a first semiconductor substrate including a plurality of pixels and a first wiring structure having a first bonding pad; a second semiconductor chip including a second semiconductor substrate having pixel signal generator circuits, a second wiring structure on the second semiconductor substrate and having an upper bonding pad bonded to the first bonding pad, a back side insulating layer on a lower surface of the second semiconductor substrate and including a shielding metal pattern buried therein, and a conductive through-via penetrating the back side insulating layer and the first semiconductor substrate, and a third semiconductor chip including a bonding layer having a lower bonding pad connected to the conductive through via, a third semiconductor substrate including logic devices, and a third wiring structure having a third bonding pad bonded to the lower bonding pad.

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First Claim