SEMICONDUCTOR DEVICE AND METHOD FOR THERMAL DISSIPATION
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United States of America Patent
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Issued Date -
Jan 23, 2025
app pub date -
Jul 18, 2023
filing date -
Jul 18, 2023
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Abstract
Method to implement heat dissipation multilayer and reduce thermal boundary resistance for high power consumption semiconductor devices is provided. The heat dissipation multilayer comprises a first crystalline layer that possesses a first phonon frequency range, a second crystalline layer that has a second phonon frequency range which does not overlap with the first phonon frequency range, and an amorphous layer located between the first and second crystalline layers. The amorphous layer has a third phonon frequency range that overlaps both the first and second phonon frequency ranges.
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