CAPACITOR DEVICE AND MANUFACTURING METHOD THEREOF

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United States of America Patent

APP PUB NO 20250031389A1
SERIAL NO

18508191

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Abstract

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A capacitor device and a manufacturing method thereof are disclosed in the present invention. The capacitor device includes pad structures, bottom electrodes, a top electrode, and a dielectric layer. The bottom electrodes are disposed on the pad structures, respectively. The top electrode is disposed on the bottom electrodes. The dielectric layer is disposed between the top electrode and the bottom electrodes. The top electrode includes at least one void. The manufacturing throughput of the manufacturing method of the memory device may be enhanced accordingly.

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Patent Owner(s)

Patent OwnerAddress
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTDQUANZHOU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jung-Hua Quanzhou City, CN 9 91
Hsiao, Wei-Ming Quanzhou City, CN 11 43
Tung, Yu-Cheng Quanzhou City, CN 241 1228
Wu, Bingxing Quanzhou City, CN 3 2
Xu, Qiangwei Quanzhou City, CN 1 0

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