ACCESS LINE FORMATION FOR A MEMORY ARRAY

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United States of America Patent

APP PUB NO 20250031383A1
SERIAL NO

18788475

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Abstract

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Methods, systems, and devices for access line formation for a memory array are described. The techniques described herein may be used to fabricate access lines for one or more decks of a memory array. In some examples, one or more access lines of a deck may be formed using an independent processing step. For example, different fabrication processes may be used to form a plurality of access lines in a deck and to form the pillars (e.g., the memory cells) that are coupled with the access lines. In some examples, an offset between the access lines and the pillars may exist due to the components being fabricated in different processing steps.

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Patent Owner(s)

Patent OwnerAddress
MICRON TECHNOLOGY INCBOISE ID 83716

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Conti, Anna Maria Milan, IT 45 125
Redaelli, Andrea Calolziocorte (Lc), IT 157 1129

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