METHODS FOR DEPOSITING A MOLYBDENUM METAL FILM ON A DIELECTRIC SURFACE OF A SUBSTRATE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
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United States of America Patent
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Jan 23, 2025
app pub date -
Oct 8, 2024
filing date -
Oct 8, 2024
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Abstract
Methods for depositing a molybdenum metal film directly on a dielectric material surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; and depositing a molybdenum metal film directly on the dielectric surface, wherein depositing comprises: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed directly on a surface of a dielectric material deposited by the methods of the disclosure are also disclosed.
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