Multibit High Density Read Only Memory Using Multiple Reference Biases
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United States of America Patent
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Issued Date -
Jan 23, 2025
app pub date -
Jul 18, 2024
filing date -
Jul 18, 2024
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Abstract
Methods and systems which involve computer memories are disclosed herein. A disclosed multibit read only memory (ROM) includes a plurality of voltage generators for generating a plurality of voltages and a transistor having a first node and a second node. The transistor can be a field effect transistor (FET) and the first node can be a gate node and the second node can be a source or drain node. The ROM includes a connection from the first node to a first supply voltage node which is biased by one of the voltages in the plurality of voltages. The ROM includes a connection from the second node to a second supply voltage node which is biased by one of the voltages in the plurality of voltages. The value of a multibit ROM cell in the multibit ROM is stored as a resulting conductivity state of the transistor.
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