RESISTIVE RANDOM ACCESS MEMORY UNIT WITH ONE-WAY CONDUCTION CHARACTERISTIC AND FABRICATING METHOD THEREOF
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United States of America Patent
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Issued Date -
Jan 23, 2025
app pub date -
Jan 17, 2024
filing date -
Jan 17, 2024
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Abstract
A fabricating method of a resistive random access memory unit with one-way conduction characteristic includes performing an initializing step, a forming step and a reverse resetting step. The initializing step includes providing the resistive random access memory unit. The forming step includes applying a setting voltage on a lower metal layer, and coupling an upper metal layer to a ground voltage to transform the resistive random access memory unit to a low resistive state. The reverse resetting step includes coupling the lower metal layer to the ground voltage and applying a resetting voltage to the upper metal layer to transform the resistive random access memory unit to a one-way conduction state. A forward reading current is greater than a reverse reading current, and the forward reading current is less than 3000 times of the reverse reading current.
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