Importance

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Abstract

Provided are an optical proximity correction (OPC) method capable of maintaining full-chip bias consistency and a mask manufacturing method including the OPC method. The OPC method includes obtaining a first optical proximity corrected (OPCed) design layout by implementing a first OPC on an OPC target design layout; performing a reverse dissection on the OPC target design layout based on the first OPCed design layout to generate first segments; performing a reverse correction to allocate first biases of the first OPCed design layout to the first segments of the OPC target design layout; determining a full-chip representative bias based on a segment grouping of the first segments; applying the full-chip representative bias to an entire chip area; preparing mask data based on the full-chip representative bias that has been applied to the entire chip area; and exposing a mask substrate based on the mask data.

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First Claim