CMP SLURRIES
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jan 23, 2025
app pub date -
Oct 8, 2024
filing date -
Oct 8, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
The present technology generally relates to compositions and methods for polishing surfaces comprising a metal and a dielectric film material. Embodiments include methods for polishing a surface comprising W, TEOS/SiO2 and SiN, comprising applying a polishing slurry comprising an abrasive, a SiN polishing rate enhancer, and an anionic surfactant, and methods of buffering a metal oxide salt in a CMP slurry to obtain an increased robustness against TEOS removal comprising polishing a surface comprising a metal and TEOS by applying a polishing slurry comprising an anionic modified colloidal silica abrasive and an anionic surfactant.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully