METHOD FOR FORMING AN ALUMINUM NITRIDE LAYER
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United States of America
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Issued Date -
Jan 16, 2025
app pub date -
Jul 25, 2024
filing date -
Jul 25, 2024
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Abstract
A method for forming an aluminum nitride layer (310, 320) comprises the provision of a substrate (100) and the forming of a patterned metal nitride layer (110). A bottom electrode metal layer (210) is formed on the exposed portions (101) of the substrate. An aluminum nitride layer portion (320) grown above the exposed portion (101) of the substrate (100) exhibits piezoelectric properties. An aluminum nitride layer portion (310) grown above the patterned metal nitride layer (110) exhibits no piezoelectric properties (310). Both aluminum nitride layer portions (320, 310) are grown simultaneously.
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