Fabrication Method for a Thin-Film Layer on a Substrate
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United States of America
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Issued Date -
Jan 16, 2025
app pub date -
Nov 28, 2022
filing date -
Nov 28, 2022
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Abstract
A method for fabrication of a device from a material stack is disclosed. The material stack includes a first layer on a second layer. The method includes providing the material stack, creating a first mask on the surface of the first layer, patterning the first mask, a first etching step of the first layer to a pre-defined end point and thereby building regions of retained material, a second etching step of the first layer to remove remaining material from the first layer between the regions of retained material, creating a second mask on the surface of the second layer, patterning the second mask, etching the material of the second layer.
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