SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
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United States of America
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Jan 16, 2025
app pub date -
Jun 10, 2024
filing date -
Jun 10, 2024
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Abstract
A semiconductor device includes a channel layer including a first group III-V semiconductor material; a barrier layer provided on an upper surface of the channel layer, the barrier layer including a second group III-V semiconductor material that is different than the first group III-V semiconductor material; a plurality of sources/drains spaced apart from each other on an upper surface of the barrier layer; a gate insulating layer covering the upper surface of the barrier layer and upper surfaces of the plurality of sources/drains; a gate provided on an upper surface of the gate insulating layer, the gate not overlapping the plurality of sources/drains; a plurality of source/drain electrodes electrically connected to corresponding sources/drains among the plurality of sources/drains; and a gate electrode electrically connected to the gate, wherein the plurality of source/drain electrodes has a diagonally symmetrical arrangement.
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