Importance

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Abstract

A nitride semiconductor device, including a substrate with a first nitride semiconductor layer on its surface, a block layer, an electron transit layer and an electron supply layer sequentially formed thereon. Formed along an inner surface thereof a first opening penetrating through the block layer to the first nitride semiconductor layer, a source electrode provided in a second opening in a location away from the first opening and connected to the block layer. The second opening penetrating through the electron supply and electron transit layers to the block layer. On an opposite surface of the substrate a drain electrode is provided. Seen in plan view, the first opening and the source electrode extend in a same, longitudinal direction, and the first opening includes: two straight portions extending in the longitudinal direction with the source electrode being interposed therebetween, and a first connection portion connecting ends of the two straight portions.

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First Claim