SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Jan 16, 2025
app pub date -
Sep 30, 2024
filing date -
Sep 30, 2024
priority date (Note) -
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status (Latency Note)
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Abstract
A bonding layer including a first metal region is disposed on at least a portion of an upper surface of a support substrate. An underlying layer including a sub-collector region that is made of a conductive semiconductor material and is electrically connected to the first metal region is disposed on the bonding layer. A first transistor including a collector layer electrically connected to the sub-collector region, a base layer disposed on the collector layer, and an emitter layer disposed on the base layer is disposed on the sub-collector region. On the sub-collector region, a collector electrode electrically connected to the sub-collector region is located outward of the first transistor to overlap the first metal region in plan view.
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