DETERMINING AN ETCH EFFECT BASED ON AN ETCH BIAS DIRECTION
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United States of America
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Issued Date -
Jan 16, 2025
app pub date -
Oct 26, 2022
filing date -
Oct 26, 2022
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Abstract
An etch bias direction is determined based on a curvature of a contour in a substrate pattern. The etch bias direction is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined, and an etch bias direction is determined based on the curvature by considering curvatures of adjacent contour portions. A simulation model is used to determine an etch effect based on the etch bias direction for an etching process on the substrate pattern.
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