3D MEMORY CELL WITH DUAL-SIDE CONTACTS AND METHOD OF FABRICATION
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United States of America
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Issued Date -
Jan 9, 2025
app pub date -
Aug 15, 2023
filing date -
Aug 15, 2023
priority date (Note) -
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Abstract
Disclosed herein is a memory device that includes a stack structure. The stack structure has alternating first layers and dielectric layers. The stack structure has a first surface and a second surface opposite to the first surface. First contact structures include a conductive material. The first contact structures penetrate from the first surface into the stack structure to be in contact respectively with a first portion of first layers. Second contact structures include a conductive material. Each of the second contact structures penetrates from the second surface into the stack structure to be in contact respectively with a remainder portion of conductive layers other than the first portion of the first layers.
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