SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250017004A1
SERIAL NO

18347542

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Abstract

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A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a transistor, and a capacitor. The transistor includes a gate electrode disposed on the substrate. The capacitor is electrically connected to the transistor and includes a capacitor dielectric and a capacitor electrode. The capacitor dielectric and the capacitor electrode are stacked over the gate electrode of the transistor.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, SHIH-HSIEN HSINCHU COUNTY, TW 43 157
KO, CHUN-YAO HSINCHU CITY, TW 40 149
KUO, LIANG-TAI HSINCHU COUNTY, TW 17 55
TSUI, YINGKIT FELIX CUPERTINO, US 48 6

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