CAPACITOR STRUCTURE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
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United States of America
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Issued Date -
Jan 9, 2025
app pub date -
Mar 22, 2024
filing date -
Mar 22, 2024
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Abstract
A capacitor structure is provided. The capacitor structure comprises an upper electrode, a lower electrode including a lower electrode film and a lower interface electrode film, a capacitor dielectric film between the lower electrode and the upper electrode, and an interface blocking film between the lower electrode and the capacitor dielectric film, the interface blocking film being in contact with the capacitor dielectric film and the lower interface electrode film, wherein the interface blocking film includes a first metal oxide containing a first metal element, the lower interface electrode film includes a second conductive metal oxide containing a second metal element different from the first metal element, the capacitor dielectric film does not include the first metal oxide, and a thickness of the lower interface electrode film is greater than that of the interface blocking film.
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