SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America
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Jan 9, 2025
app pub date -
Sep 18, 2024
filing date -
Sep 18, 2024
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Abstract
A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.
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