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Abstract

A wafer processing method includes forming a bonded wafer by bonding a first wafer to a second wafer, irradiating a laser beam along a position separate inward from an outer circumferential edge by a predetermined distance in an annular manner and forming, inside the first wafer, an annular modified layer and cracks that extend from the modified layer toward a front surface side to cause warpage in the outer circumferential region. The method also includes detecting the amount of warpage of the outer circumferential region, determining whether or not bonding between the first wafer and the second wafer has been released on the basis of the amount of warpage of the outer circumferential region, deciding whether or not to execute a grinding step, and if so, grinding the first wafer from a back surface side.

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First Claim