SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America
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Jan 9, 2025
app pub date -
Sep 15, 2024
filing date -
Sep 15, 2024
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Abstract
A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.
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