CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250014890A1
SERIAL NO

18709780

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Abstract

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The present disclosure relates to methods for providing a silicon nitride film. In particular, the film can be a carbon-doped, silicon nitride film. Methods can include depositing a doped silicon nitride and then plasma treating the doped silicon nitride to provide a conformal film.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Austin, Dustin Zachary Tigard, US 14 26
Gupta, Awnish Hillsboro, US 21 31
Henri, Jon West Linn, US 68 10895
Savchak, Oksana Tualatin, US 3 1
Srinivasan, Easwar Portland, US 42 3866
Van, Schravendijk Bart J Palo Alto, US 91 8614
Wei, Fengyan Meridian, US 4 1

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