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Abstract

A wafer processing method includes a step of forming a bonded wafer by provisionally bonding a first wafer and a second wafer, a step of forming, with a laser beam, modified layers in an annular pattern and cracks, which spread from the modified layers, inside the first wafer, a step of increasing bonded strength of the bonded wafer by anneal processing, a step of removing an outer peripheral region on a side of the outer peripheral edge relative to the modified layers and the cracks, by positioning a cutting blade at the annular region of the first wafer, and causing the cutting blade to cut in from a side of the other side of the first wafer to a depth not reaching the second wafer, and a step of thinning the first wafer to a finish thickness by grinding the first wafer from the side of the other side.

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First Claim