WAFER PROCESSING METHOD
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United States of America
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Issued Date -
Jan 9, 2025
app pub date -
Jun 13, 2024
filing date -
Jun 13, 2024
priority date (Note) -
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status (Latency Note)
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Abstract
A wafer processing method includes a modified layer forming step of forming a modified layer along a chamfered portion by applying a laser beam having a wavelength transmissible through a wafer with a condensing point of the laser beam positioned in an inner part of a boundary portion between an effective region and the chamfered portion, a chamfered portion removing step of scattering and removing the chamfered portion by a centrifugal force by holding the wafer on a spinner table and rotating the wafer at high speed after the modified layer forming step is performed, and a processing step of processing the wafer to thin the wafer to a desired thickness by grinding an undersurface of the wafer after the chamfered portion removing step is performed.
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