HEAT TREATMENT APPARATUS AND TEMPERATURE REGULATING METHOD FOR SEMICONDUCTOR WORKPIECE
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United States of America
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Issued Date -
Dec 26, 2024
app pub date -
May 31, 2024
filing date -
May 31, 2024
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Abstract
A heat treatment apparatus is provided, which includes: a first cover plate including three or more first windows; a second cover plate including two or more second windows, the second windows are transmissive to radiation with a wavelength of 2.7 μm; a workpiece support element between the first cover plate and the second cover plate, configured to support the semiconductor workpiece; a temperature measurement component comprising an infrared emitter, at least two infrared reflection sensors that are successive and at least two infrared transmission sensors, where the three or more first windows comprise a first window at a first position, a first window at least one middle position and a first window at a final position in a horizontal direction away from the infrared emitter, and a surface facing to the second cover plate of the first window at the middle position has a reflection transmission coating layer.
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