SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
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United States of America
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Issued Date -
Dec 26, 2024
app pub date -
Jun 26, 2023
filing date -
Jun 26, 2023
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Abstract
A semiconductor device includes a semiconductor fin. The semiconductor device includes a first silicon oxide layer contacting the semiconductor fin at a first interface and including nitrogen at a first concentration. The semiconductor device includes a second silicon oxide layer contacting the first silicon oxide layer at a second interface and including nitrogen at a second concentration that is greater than the first concentration. And the semiconductor device further includes a gate electrode over the second silicon oxide layer
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