METHODS OF FORMING A SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERNS ON A BONDING LAYER AND SEMICONDUCTOR DEVICES FORMED BY THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Dec 26, 2024
app pub date -
Sep 4, 2024
filing date -
Sep 4, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Methods of forming a semiconductor device and semiconductor device formed by the methods are provided. The methods of forming a semiconductor device may include providing a first substrate and a first bonding layer that is provided on the first substrate, forming a sacrificial pattern and an active pattern on a second substrate, forming a second bonding layer on the active pattern, bonding the second bonding layer onto the first bonding layer, removing the second substrate, and removing the sacrificial pattern to expose the active pattern. Forming the sacrificial pattern and the active pattern on the second substrate may include forming a preliminary sacrificial pattern and the active pattern on the second substrate and oxidizing the preliminary sacrificial pattern. The preliminary sacrificial pattern and the active pattern may be sequentially stacked on the second substrate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully