SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND NEURAL NETWORK APPARATUS INCLUDING THE SAME
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United States of America
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Issued Date -
Dec 26, 2024
app pub date -
Jun 20, 2024
filing date -
Jun 20, 2024
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Abstract
A synapse device including a ferroelectric field effect transistor, and a neural network apparatus including the same, are provided. The synapse device includes a first ferroelectric field effect transistor and a second ferroelectric field effect transistor electrically connected in parallel with the first ferroelectric field effect transistor, wherein the first ferroelectric field effect transistor may have a first coercive voltage, and the second ferroelectric field effect transistor may have a second coercive voltage that is greater than the first coercive voltage.
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