OPTICAL PROXIMITY CORRECTION METHOD AND MASK MANUFACTURING METHOD BY USING THE SAME
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United States of America
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Issued Date -
Dec 26, 2024
app pub date -
Jan 19, 2024
filing date -
Jan 19, 2024
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Abstract
The inventive concepts provide an optical proximity correction (OPC) method capable of implementing a pattern having a critical pitch by using a single exposure patterning, and a mask manufacturing method including the OPC method. The OPC method includes receiving a design layout for a target pattern to be formed on a substrate, obtaining an OPC pattern by performing a first OPC on the design layout, obtaining a simulation contour of the OPC pattern, based on the simulation contour of the OPC pattern, performing a line-end sharpening (LES) OPC on line-ends of line patterns extending in a first direction and adjacent to each other in the first direction, cutting a portion of the line-end of the line pattern, and performing a second OPC on side lines of another line pattern adjacent to the line-end in a second direction perpendicular to the first direction and extending in the first direction.
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